The Transistor

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Publisher: SMPTE
Doc Type: Journal Article
Article Type: research-article
Abstract: A general qualitative introduction to the semiconductor diode and transistor is presented. The wartime development of the point contact rectifier led to the discovery of the point contact transistor, which was followed by the invention of the junction diode and transistor having many superior properties. The basic physical principles of operation and various commercial devices are discussed. High-frequency effects, and modified forms of the original transistor which improve the high-frequency performance, are described.
Publication Date: 1957-06-01
DOI: 10.5594/J11232
Link: https://doi.org/10.5594/J11232
Author(s): R. D. Middlebrook

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R. D. Middlebrook; The Transistor, Journal of the SMPTE ( Volume: 66, Issue: 6, June 1957); SMPTE, 1957. Available at https://doi.org/10.5594/J11232

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R. D. Middlebrook; The Transistor, Journal of the SMPTE ( Volume: 66, Issue: 6, June 1957); SMPTE, 1957. Available at https://doi.org/10.5594/J11232

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R. D. Middlebrook; The Transistor, Journal of the SMPTE ( Volume: 66, Issue: 6, June 1957); SMPTE, 1957. Available at https://doi.org/10.5594/J11232

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<span class="citation">R. D. Middlebrook; <cite>The Transistor</cite>, Journal of the SMPTE ( Volume: 66, Issue: 6, June 1957); SMPTE, 1957. Available at <a href="https://doi.org/10.5594/J11232" target="_blank" rel="noopener">https://doi.org/10.5594/J11232</a></span>

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R. D. Middlebrook; The Transistor, Journal of the SMPTE ( Volume: 66, Issue: 6, June 1957); SMPTE, 1957
doi: 10.5594/J11232
url: https://doi.org/10.5594/J11232

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R. D. Middlebrook; <cite id="bib-10-5594-j11232">The Transistor</cite>, Journal of the SMPTE ( Volume: 66, Issue: 6, June 1957); SMPTE, 1957
<span class="doi">10.5594/J11232</span>
</li>